Abstract
Effects of electron and neutron irradiation on dielectric properties of Au-doped silicon are examined as a function of the frequency between 1 kHz and 150 GHz. The studies compare the Au-doped Si with a high resisitivity (HR) pure Si in the as-received state and after electron irradiation. The obtained data for both materials show that electron irradiation and neutron irradiation do not cause degradation of the dielectric loss behaviour, but even improve it. This beneficial effect already observed earlier in pure silicon is also observed in Au-doped silicon. Loss data obtained in-beam under electron irradiation are also reported.
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