Abstract
Crosslinking and main chain scission reactions were investigated in the present study for γ-rays and ion beams in linear and branching polysilanes which have silicon branchings in the main chain at 5–32 at.%. The crosslinking reactions become predominant for the irradiation with an increase in the branching density. However, the efficiency of crosslinking reactions in linear and branching polysilanes are almost consistent in case of the irradiation to ion beams. This is due to the differences in distribution of deposited energy by γ-rays and ion beams, and suggests that the size of the chemical track is responsible for the gelation behavior of the polymers. The trace of formed gel was also concluded not to give the accurate G values of crosslinking and main chain scission reactions in the polymers for high LET radiations such as ion beams.
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