Abstract
The effects of irradiation of silicon nitride films with an argon excimer laser having a capability of emitting 126 nm photons of a fluence of 1014 per cm2 per pulse have been studied. We found that laser irradiation induces crystalline silicon precipitation accompanied with nitrogen desorption within thin surface layers of silicon nitride films. We showed that laser-induced electronic excitation played a crucial role in the process and further that the amount of precipitated silicon depends on the film surface temperature.
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