Abstract
ArF excimer laser induces silicon precipitation accompanied by nitrogen desorption on the surface of an amorphous Si3N4 film, when the laser fluence exceeds the critical fluence which is about 0.2 J/cm2. The amount of nitrogen desorption and the silicon precipitation of the amorphous Si3N4 film increases with increasing laser fluence. The depth of the silicon precipitation on the amorphous Si3N4 film increases exponentially with increasing laser fluence.
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