Abstract
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.
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