Radiation Effects in a Post-Moore World

Abstract

An overview is presented of the significant influences of Moore's Law scaling on radiation effects on microelectronics, focusing on historical trends and future needs. A number of milestones in the evolution and understanding of total-ionizing-dose and single-event effects are discussed within the context of classical Dennard scaling. This discussion focuses on the discovery of fundamental mechanisms, development of radiation-tolerant IC technology, and increasing maturity and complexity of Si-MOS-based devices, circuits, and systems. Examples are shown that illustrate how the end of Dennard scaling has influenced radiation effects in current technology generations, due to the increasingly complex and diverse materials and devices that are now incorporated. The radiation responses of devices with alternative channels to silicon and transistors based on 2-D materials are discussed, with an emphasis on opportunities and challenges for ultimately scaled devices. Particular challenges to ultimately scaled technologies are presented by single-particle-induced displacement damage and microdose effects. The article concludes with a look forward to a future in which many types of microelectronic devices and ICs are increasingly more vulnerable to radiation effects and increasingly more difficult to test in a practical and cost-effective manner.