Proton irradiation effects on advanced digital and microwave III-V components

Abstract

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10/sup 10/ to 2/spl times/10/sup 14/ protons/cm/sup 2/. Large soft-error rates were measured for digital GaAs MESFET (3/spl times/10/sup -5/ errors/bit-day) and heterojunction bipolar circuits (10/sup -5/ errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-/spl mu/m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10/sup 14/ protons/cm/sup 2/ [equivalent to total doses in excess of 10 Mrad(GaAs)]. >