Radiation Effect of MOS Structure Irradiated by 0.8MeV Electron Beam

Abstract

Metal-oxide-semiconductor (MOS) structure is highly sensitive to SiO2-Si interface. It will reflect parameters such as interface density and oxide layer charge expediently. For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.8 MeV electron at dosage between 2×1013cm-2~1×1014cm-2as radiation source respectively. We found that electron radiation will induce interface density at SiO2-Si interface. According to comparison with C-V curve of MOS structure at high frequency and low frequency, we obtain that the experimental data of interface density is up to 1014(cm-2eV-1). In addition, we also obtain the relationship between the parameter and radiation dosage.