Abstract
Radiation induced defects have been studied in undoped and Nd-doped (6 mol% and 12 mol%) LaGaO3 crystals. Wide absorption band (2.2–2.8 eV) was observed after crystal irradiation with X-rays at 300 K. Induced defects have been annealed in air at ∼450 K. Similar absorption band was observed in transient absorption spectra after ns-pulsed electron beam excitation. The radiation defect creation efficiency is higher in undoped LaGaO3 crystal. It is shown that small concentration of Nd-doping increases the LaGaO3 crystal radiation hardness. In transient absorption spectra along with 2.7 eV band the absorption bands at 1.5 eV and 2.2 eV were observed. The decay process of transient absorption has been studied. The luminescence spectra and luminescence decay times for 4F3/2 → 4I9/2 and 4G7/2 → 4I9/2 transitions in Nd-doped crystals have been studied. Decay time decreases and additional fast decay component appears with Nd concentration increase. The interaction of Nd atoms with defects and Nd atoms aggregation processes has been discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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