Abstract
Defect levels produced in n-type germanium by 1.5 MeV electron irradiation and their annealing behaviour were studied by DLTS. Two electron traps located at Ec-0.20 eV and Ec-0.40 eV and a hole trap at Ev+0.24 eV were found to be formed by the irradiation with introduction rates of 0.05/cm, 0.54/cm and 0.22/cm respectively. When the specimen was annealed at 370 K for 10 minutes, a considerable part of the Ec-0.20 eV level was observed to be transformed into a new electron trap at Ec-0.23 eV.
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