Abstract
The degradation of 2-MeV electron-irradiated C-doped SiGe diodes was investigated. After electron irradiation, the reverse current increases with increasing electron fluence, while the capacitance decreases. At the highest fluence studied (1×10 16 e/cm 2), a different behaviour of the reverse current with junction area was observed. DLT spectra show that a broad peak is observed for p +/n and n +/p diodes after 1×10 15 e/cm 2 electron irradiation. The degradation of the diodes is mainly attributed to the radiation-induced defects in SiGe layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
