Abstract
A fast bipolar monolithic Charge Sensitive Preamplifier (CSP) implemented in the monolithic 2 μm BiCMOS technology (called HF2CMOS), was studied after neutron irradiation at fluences between 1.26 × 10 12 and 1.09 × 10 14 n/cm 2. Neutron fluence effects on the base spreading resistance, r bb′, and the parallel noise of the bipolar npn input device and on the PMOS transistor in the second stage of the preamplifier, are presented. It is shown that, with the HF2CMOS process, a hardened CSP can be realized.
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