Radiation damage microstructures in silicon and application in position sensitive charged particle detection

Abstract

Area selective irradiation using MeV ions having different ranges has been performed in a nuclear microprobe to produce radiation damage microstructures in silicon photodiodes. IBIC (Ion Beam Induced Charge) technique has been used for on line monitoring of radiation damage produced by different fluences of He, Li and O ions of MeV energies. Three-dimensional patterning of radiation damage structures may be used for different applications. By creating a region of constant damage gradient in Si photodiode, position sensitive radiation detection has been demonstrated.