On the use of pulsed microbeam in IBIC

Abstract

In order to expand the application possibilities of ion beam induced charge (IBIC) technique to a wider range of semiconductor materials and devices, three novel modes of measurements have been developed. The fast beam deflector was used to produce ns pulses of single ions and the trigger signal provides a time scale for time resolved IBIC measurements. Longer pulses (>100 ns) containing tens or hundreds of ions were used to enhance IBIC signals in materials with poor charge transport properties. Continuous beam current (10 pA to 1 nA) of 3 MeV protons was used to measure ion beam induced voltage (IBIV) in thin amorphous silicon films. In these samples it was possible to correlate the charge collection properties with elemental distribution measured simultaneously with PIXE. Radiation damage was shown to be negligible for doses below 10 7 protons μm −2.