Radiation damage in p-type silicon irradiated with neutrons and protons

Abstract

Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials were irradiated with reactor neutrons and 24 GeV/ c protons up to an equivalent fluence of Φ eq=3×10 14 cm −2. Radiation effects on effective trapping times, effective dopant concentration and leakage current were measured at 20 °C. Annealing of defects was performed at 20 and 60 °C.