Radiation damage effects from 2 MeV protons in silicon surface barrier detectors

Abstract

The influence of radiation damage in silicon surface barrier detectors by 2 MeV protons for radiation doses up to 6×10 12 protons cm −2 on the characteristic diode properties and the detector response to protons and alpha particles have been studied. From investigations with protons significant correlations between the diode characteristics and the charge collection efficiency as well as the energy resolution as a function of the radiation dose are found. Experimental results from investigations of the detector response to alpha particles as a function of detector reverse bias, temperature and shaping time constant as well as measurements of the detector capacity are reported and their relations with radiation induced trapping, detrapping and recombination effects are discussed.