Abstract
A methodology for computer-simulated design of active microwave filters, either all-or band-pass ones, was previously carried out by the authors. We consider the effects of radiation and temperature on the operation of such filters. In general, gamma-exposure of the GaAs MESFETs up to a total gamma-dose of 80.0 Mrads causes the gain of the filters to decrease. In the ideal cases of both filters the reduction is negligible, but in the optimal cases, the gain reduction is noticeable. Also, when the devices' temperature increases, from -50 up to 150 /spl deg/C, the gain is reduced in both cases; ideal and optimal.
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