Radiation and temperature effects on the operation of microwave active filters

Abstract

A methodology for computer-simulated design of active microwave filters, either all- or band-pass ones, was shown previously (I.A. El-Shahat and co-workers, Int. AMSE Conf., Rabat, Morocco, Vol. 1, Oct. 1995, pp. 265–274; Microwaves RFJ. (Nov. 1995; (in press)). In this paper, we illustrate the effects of radiation and temperature on the operation of such filters. In general, gamma-exposure of the GaAs FETs (MESFETs) up to 80 Mrads leads the gain of the filters to decrease. In the ideal and optimal cases of both filters the decrease of gain is negligible. Also, when the device temperature increases from -50 to 150°C, the gain is decreased in both cases; ideal and optimal.