Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane

Abstract

Listen

Translate article

The hardness of SiO2/Si structures grown in O2+TCA (1,1,1,-trichloroethane) to damages caused by ionizing radiation and hot-electron injection has been found to depend strongly on the amount of TCA introduced. Using minute amounts (much smaller than conventionally used) of TCA, we have been able to achieve a dramatic improvement of the hardness. When excess amounts of TCA are used, however, the hardness degrades. In addition, the use of TCA also causes a significant change in the gate size dependence of the radiation or hot-electron-induced interface traps. These results will be explained in terms of the effects of Cl on the interfacial strain near the SiO2/Si transition region.