Abstract
Increasing power density, faster switching speed and higher switching frequency force designers to spend more time both considering the effect of Electromagnetic Interferences (EMI) and debugging a design that has EMI problems but studying the reliability and robustness of some components, silicon carbide (SiC) power switching devices in particular, under severe conditions such as short-circuit. In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using SiC MOSFETs before and after repetitive short-circuit aging tests. The compared parameter is the Near H-Field. This paper shows that the repetitive short-circuit aging tests of SiC MOSFET has great influence on the radiated EMI. Experimental results are presented and analysed.
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