Abstract
The radial distribution of electrically active B in individual in situ B-doped Si nanowires (SiNWs) grown by the vapor liquid solid (VLS) process is studied by combining micro-Raman spectroscopy and wet chemical etching. The etching of the surface layer results in significant changes in the Raman spectra; Fano-type asymmetry, which is a characteristic of heavily doped p-type Si, disappears and the spectra become almost symmetric. The Raman data reveal that the as-grown B-doped SiNWs consist of a heavily B-doped shell and an almost intrinsic core.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
