Abstract
We study the interaction of Landau-level transitions with the Fabry-Pérot mode in a semiconductor microcavity. Using an analytical expression for the description of the cavity mode we obtain analytical results for the coupled-mode dispersion relation. The solution of the dispersion relation as a function of the magnetic field shows that the appearance of the strong or weak coupling regime depends on the Landau level index. A qualitative comparison to the experimental data by Tignon et al. [Phys. Rev. Lett. 74, 3967 (1995)] is given.
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