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Abstract
The time evolution of low temperature photoconductivity (PC) in Liquid Encapsulated Czochralski Semi-insulating GaAs for below-the- gap energy photons is studied. For a certain range of photon flux densities both the quenching and enhancement part of the PC curve can be observed. It is shown that the transformation of EL2 defects into their metastable states cannot be responsible for the quenching part of PC curve. The good correlation of the PC with deep trap occupancy is established during both quenching and enhancement part of PC curve, leading to the conclusion that filling/emptying of deep traps plays the key role in peculiar time evolution of PC.
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