Abstract
Understanding of resist fundamentals is important for the efficient development of resist materials. In this study, we investigated the quencher diffusion in a chemically amplified resist consisting of poly(4-hydroxystyrene-co-t-butyl methacrylate), triphenylsulfonium nonafluorobutanesulfonate (an acid generator), and tri-n-octylamine (a quencher). The dose-pitch matrices of line width and line edge roughness were analyzed on the basis of the sensitization and reaction mechanisms of chemically amplified extreme ultraviolet resists. The ratio of the diffusion constant of tri-n-octylamine to that of nonafluorobutanesulfonic acid was estimated to be 1.2 ± 0.7.
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