Quenched-in deep levels in boron-doped silicon

Abstract

The DLTS technique was used to study quenched-in deep traps in boron doped silicon crystals, heated at temperatures in the range 700–900°C prior to quenching. The results vary with temperature, demonstrating that the exact temperature up to which the samples are heated prior to quenching plays a determining role on the number of different traps intorduced and their positions in the energy gap, which is often overlooked in the literature.