An assessment of ion implantation damage using the scanning electron microscope

Abstract

Abstract The assessment of ion implantation damage through the use of the scanning electron microscope (SEM) is discussed. Emphasis is placed on the method of analysis and on the limitations and the unique features of the technique. SEM assessments are made of the lattice disorder produced by the implantation of 40 keV Hg ions into boron-doped silicon crystals at room temperature, and are shown to be in quantitative agreement with Rutherford scattering measurements. Both methods show that the damage approaches saturation at a dose of ≍4 × 1013 ions/cm2, and both show that boron concentrations in the range 1017 to 1020 atoms/cm3 have no significant effect on the susceptibility of silicon to ion implantation damage.