Abstract
The authors report a study of the hot-electron real space transfer (RST) between two InGaAs layers separated by a 200-nm InAlAs barrier. The electron heating is generated by an electric field applied parallel to one of the layers, which represents a two-dimensional hot-electron emitter. Strong suppression of the RST by an increased concentration n/sub s/ of the emitter electrons was observed. With increasing n/sub s/, the critical heating voltage, required to initiate the RST, increases. At a fixed heating voltage, a sudden quench of the RST is observed as n/sub s/ increases. Both phenomena are explained by an electronic screening effect which smooths out the nonuniformity of the electric field in the emitter channel.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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