Abstract
To calculate the energy and equilibrium density of electron-hole pairs in SiO2/Si/SiO2 quantum wells (QWs), nonlinear Schrodinger equations for electrons and holes were numerically solved. Calculations were carried out for (100) and (111) silicon surfaces and various values of the QW width. It is shown that the binding energy of electron-hole pairs in a quasi-two-dimensional electron-hole liquid (EHL) is much higher than the binding energy in a three-dimensional EHL. The results of calculations are compared with the experimental results for a wide range of QW widths.
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