Abstract
The spontaneous emission rate into Surface Plasmon Polariton (SPP) mode for the InGaN/GaN quantum well (QW) with SP coupling is presented taking into account the electron and hole band structures, the photon density of states, and evanescent fields of SPP. The optical properties of SP-enhanced InGaN QW structure with different QW layer number are investigated in detail by using the formula. It is observed that the energy of electron-hole pairs in the InGaN QW can be efficiently transferred into the SPP modes which will induce the significantly enhancement of the internal quantum efficiency (IQE) of SP-enhanced light emitting diodes (LEDs), especially for the original IQE in the range of 6%–25%. Furthermore, the distribution of electron and hole densities in each well layer can evidently affect the Purcell enhancement factor due to the distance dependence of the intensity of SP-QW coupling. The numerical results also indicate that the SP-enhanced LED can suppress the efficiency droop effect as long as the extraction efficiency of SPP mode is enough large.
Published Version
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