Abstract
A global model of SiGe chemical vapor deposition (CVD), accounting for the coupled heat and radiation transfer, species transport, surface reactions, and elastic strains in the layer, is developed. The surface kinetics and the strains are described within the quasi-thermodynamic approach considering the adsorbed layer to be in the quasi-equilibrium with the crystal lattice. The model is verified using a wide range of experimental data and then is applied to study of SiGe growth in the 200mm wafer Centura reactor from a mixture of SiH4, GeH4, and H2. The temperature, species concentrations, and velocity vector fields in the reactor, the growth rate and Ge fraction distributions along the wafer are obtained. The model predicts slowing down the growth and shift of the alloy composition towards Ge at high dilution of the precursors by hydrogen.
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