Abstract
Flow and deposition in a low-pressure CVD reactor are analyzed by use of the Monte Carlo direct simulation method. The model reactor has a wedge-shaped substrate between two parallel walls. Not only the surface reaction but also the gas-phase reaction is partly taken into consideration, which results in a mixture of SiH4, SiH2, and H2. The distribution of the film growth rate along the substrate is governed by the Knudsen number, the gas temperature, and the SiH2 sticking coefficient. The effects of the last two are very large.
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