Quasi-CW Room Temperature Operation of 1.52 µm InGaAsP/AlGaAs Vertical Cavity Lasers Obtained by Localised Fusion

Abstract

1.52 µm double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in-situ built-in lateral current confinement were fabricated using localised wafer fusion process. These devices operate at room temperature in quasi-CW regime at 10% duty cycle. Operation characteristics of these lasers are limited by the high resistivity of p-InP/p-GaAs fused junctions which is a result of using carbon-doped p-AlGaAs/GaAs distributed Bragg-mirrors.