Abstract
We have shown recently that localized fusion of InP to GaAs provides high quality interfaces, low voltage drop p-GaAs/p-InP junctions and additional lateral current confinement in InGaAsP/InP edge emitting laser diodes fused on p-GaAs substrates1,2. In the present study’, the concept of localized fusion is extended to the fabrication of InGaAsP/InP long wavelength vertical cavity-surface emitting lasers (VCSELs) with double fused n- and p-AlGaAs/GaAs distributed Bragg reflectors (DBR).
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