Abstract
We investigate the ballistic motion of hot holes in a submicron channel fabricated from a modulation-doped p-type GaAs∕(AlGa)As quantum well heterostructure. We observe peaks in the low temperature differential conductance, which we attribute to ballistic motion of holes limited by the onset of longitudinal-optical (LO) phonon emission when the voltage drop along the channel corresponds to an integer multiple of the LO-phonon energy.
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