Abstract
This paper presents a quasi-TM approach for the fundamental mode of transmission lines with semiconductor substrates and nonperfect metallic conductors. The approach has allowed us to develop a transmission-line model by properly defining frequency-dependent parameters in terms of the quasi-static electric potential and the electric current density along the propagation direction in the line. The previous quasi-TM analysis avoids the involved numerical root finding process typical in full-wave analysis, and overcomes the limitations of the conventional quasi-TEM approach to account for the effects of the longitudinal currents present both in the lossy substrates and in the nonperfect conductors. The transmission-line parameters have been computed by a hybrid technique that combines the method of lines with the method of the moments (MoM). The total CPU effort has been considerably reduced thanks to the possibility of finding closed-form expressions for the reaction integrals appearing in the MoM. Comparisons with previous computed and measured results show the validity of the present model
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