Abstract
A field theoretical approach to surface quantized states in semiconductors is presented. In this system the longitudinal dielectric function is a tensor whose suffices are the subbands. The quasi-particle properties in Si n-channel inversion and accumulation layers, and in an Si p-channel inversion layer are calculated in the extended Hubbard approximation. The results show excellent agreements with the experiments both in the mass and in the level separation between the ground and the first excited subband.
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