Abstract
The Hohenberg-Kohn-Sham theory of an inhomogeneous electron gas is applied to the calculation of the subband structure of accumulation and inversion layers on the Si (100) surface. The exchange-correlation effect is shown to be very important and lower the sub-band energies considerably. Especially in accumulation layers the first excited sub-band really becomes a bound state in contrast to the result of the Hartree approximation. The agreement between the theory and experimental results of inter-sub-band optical transitions is satisfactory. The effective mass and the $g$ factor are also calculated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
