Abstract
This paper is devoted to the rigorous justification of the quasi-neutral limit of bipolar transient drift-diffusion models for semiconductors with p–n junctions in the multidimensional space. The general initial data and smooth sign-changing doping profiles with good boundary conditions are considered. The limit is performed rigorously by using multiple scaling asymptotic analysis, in which one main point is the construction of a more accurate approximate solution involving the effect of initial layer. The uniform estimates with respect to the scaled Debye length are obtained through the elaborate energy method and the relative entropy functional method.
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