Abstract
Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6- ${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$ /GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.
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