Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors

Abstract

A carrier transport model for graphene nanoribbon field-effect transistors (GNR FETs) is obtained using McKelvey’s flux and quasi-ballistic transport theories. Source/drain series resistances are taken into account. With the model, an analytical expression for drain-to-source current is achieved including only three fitting parameters. The model is verified by simulation, and good agreements are observed. With the model, the drain-to-source current characteristics of GNR FETs with different drain or gate biases can be obtained very swiftly, saving much simulation time. The model will provide some design insights into the practical use of GNR FETs.