Abstract
Quasi-3D model for calculation of radiation leakage currents in modern submicron Silicon-on-Insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET) structures is proposed. The solution of a complex 3-dimensional problem is reduced to solving two tasks: 2D modeling of the traditional MOSFET cross-section and 3D modeling of the side parasitic transistor. The radiation-induced leakage current simulation in the 0.35 μm SOI MOSFET structure with taking account ionizing radiation with a dose of up to 500 krad was simulated. The results of the simulation show that in comparison with the traditional fully 3D modeling, which requires 11 hours of computer time, the computer time for the IdVg characteristic was reduced to 71 minutes (i.e. the computer time decreased by 9 times).
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