Abstract
A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties. Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.
Highlights
Chemical Vapor Deposition (CVD) [1]-[6] is a useful technique for fabricating thin and functional material films for advanced electronics
The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber
The typical overall quartz crystal microbalances (QCM) behaviors caused by the dichlorosilane and trichlorosilane gases are shown in Figure 4 and Figure 5, respectively
Summary
Chemical Vapor Deposition (CVD) [1]-[6] is a useful technique for fabricating thin and functional material films for advanced electronics. Because the gas density and viscosity may influence the gas motions in the chamber, any gas flow information influenced by the gas properties should be studied. Such an evaluation may contribute to improving and controlling the film qualities and the productivity. For this purpose, the in situ and real time gas sensing technique [4] [5] [7] is significantly useful, such as that using the quartz crystal microbalance [7]-[12]. The QCM has been used in an ambient reactive gas, such as that containing hydrogen chloride gas, which was a byproduct of the silicon CVD using chlorosilanes [2] [6]
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