Growth of GaN Layer from the Single-Source Precursor (Et2GaNH2)3

Abstract

In recent years, there has been a great interest in new routes for depositing GaN films in the application of III−V semiconductors. We report herein on the deposition of highly crystalline GaN films by low-pressure MOCVD (in the low-temperature range of 500−700 °C and the pressure range of 77−177 mbar) using the single-source precursor (Et2GaNH2)3. This process was investigated for a variety of substrates (Si(100) and polycrystalline Al2O3) using a cold wall chemical vapor deposition reactor. The thickness of films grown under these conditions ranged from 6 to 8 μm, and the growth rates varied from 7 to 8 μm/h. Films deposited at lower temperatures (500−550 °C) had a pale yellowish color and were amorphous. At 600 °C slightly gray colored films were obtained, while above 650 °C high-quality crystalline films were formed, which show diffraction patterns characteristic of the hexagonal wurtzite structure. The films are consistent with the 1:1 stoichiometry of GaN and have carbon and oxygen as impurities; ho...