Abstract
A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25µm optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25µm Ka- and Ku-version pHEMT devices demonstrate state-of-the-art power performance at 29 and 10GHz, respectively. Excellent reliability has been achieved at channel temperature exceeding 275°C. Yield exceeding 95% is demonstrated for devices with 1.875mm gate width across a 6-inch GaAs wafer. These results indicate that the 0.25µm pHEMT technology is ready for high volume production with low cost at WIN Semiconductors.
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