Abstract
We directly demonstrate quantum-confined direct band transitions in the tensile strainedGe/SiGe multiple quantum wells grown on silicon substrates by room temperaturephotoluminescence. The tensile strained Ge/SiGe multiple quantum wells withvarious thicknesses of Ge well layers are grown on silicon substrates with a lowtemperature Ge buffer layer by ultrahigh vacuum chemical vapor deposition.The strain status, crystallographic, and surface morphology are systematicallycharacterized by high-resolution transmission electron microscopy, atomic forcemicroscopy, x-ray diffraction, and Raman spectroscopy. It is indicated that thephotoluminescence peak energy of the tensile strained Ge/SiGe quantum wellsshifts to higher energy with the reduction in thickness of Ge well layers. Thisblue shift of the luminescence peak energy can be quantitatively explained bythe direct band transitions due to the quantum confinement effect at theΓ point of the conduction band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.