Abstract
Ultra-thin amorphous silicon (a-Si:H)/silicon nitride (a-Si 1−XN X) multiple layered structures have shown many of unique features as a new type of amorphous semiconductors. The extended states in a very thin (≦ 40 A) a-Si:H potentials well sandwiched with a-Si 3N 4:H barriers are quantized as directly demonstrated by observing the resonant tunneling current through the double barrier. Furthermore, the spatial extent of electron and hole wave functions has been estimated to be more than 25 A from the luminescence quenching by electric field perpendicularly applied to the multilayers. Based on the quantum size effects in the multilayer structures, wide gap, photoconductive p-type window materials for amorphous silicon solar cells and also amorphous superlattice thin film transistors have been designed and fabricated.
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