Abstract
The author describes the principles and performance of semiconductor quantum-well lasers, which are characterized by confinement of the electrons and holes to extremely thin ( approximately 70 AA) regions. This leads to major improvement in all the operating characteristics of these lasers compared to conventional semiconductor lasers, specifically, to a reduction of more than an order of magnitude in threshold current and a much narrower spectral width.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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