Abstract
We investigated quantum well intermixing (QWI) using proton implantation to form the carrier confinement structure in the active layer of a vertical-cavity surface-emitting laser (VCSEL). The required potential barrier height is discussed referring to the result of numerical analysis. The bandgap change due to the QWI was investigated experimentally for various quantum well structures, proton dose densities, and thermal annealing conditions. A potential barrier height of 30 meV was observed using a high-indium and thin-well structure. High crystalline quality was confirmed by photoluminescence intensity measurement, even after the QWI process, and the lasing of the fabricated QWI-VCSEL was observed without any deterioration. The proposed technique would be effective in improving the device performance in a simple fabrication process.
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