Abstract
New methods of implementing quantum well intermixing (QWI) in InP-based materials using defect-enhanced diffusion are presented and compared to the widely reported technique employing dielectric (usuall SiO<SUB>2</SUB>) capping with subsequent rapid thermal anneal (RTA) treatments. The new methods discussed use InP layers grown either at low temperature by gas-source molecular beam epitaxy (GSMBE) or using He-plasma-assisted GSMBE where growth surface is subjected to a continuous low energy He-plasma generated in an electron cyclotron resonance (ECR) source. The two new QWI processes, and the SiO<SUB>2</SUB> capping method, are applied to a 1.55(mu) m InGaAsP multiple quantum well laser structure. For application of the QWI process the laser structure growths are interrupted in a manner and location appropriate to carrying out the QWI process and subsequent grating etch for the fabrication of a distributed feedback (DFB) laser. After implementing the QWI and grating etch, growth on the top cladding and contact layers completes the device structure. Finally, the fabrication of a DFB laser with an integrated electro-absorption (EA) modulator is described and the resultant characteristics given.
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