Abstract
We have investigated the characteristics of low-temperature quantum transport in Al/sub x/Ga/sub 1-//sub x/As/GaAs modulation-doped heterojunctions irradiated by fast neutrons of about 14 MeV energy. The concentration and the mobility of the two-dimensional electron gas (2D EG) under low magnetic fields decrease with increase in the concentrations of scatterers, such as ionized impurities, lattice defects, and interface roughness. On the other hand, under strong magnetic fields, the Hall plateau broadening associated with the Landau localized states, and the Shubnikov--de Hass (SdH) oscillation enhancement associated with the Landau extended states, increase markedly after fast-neutron irradiation.
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